Where DA will be the deformation possible in graphene, kB is the Boltzmann constant, e could be the electron cost, ℏ Graphene growth by thermal decomposition of silicon carbide (SiC) is a technique that makes wafer-scale, one-orientation graphene on an insulating substrate. It is often often called epigraphene, and has https://www.facebook.com/permalink.php?story_fbid=pfbid0bmCEXqFvYNJMUmM3q2FWZWS1XLvNWxNHWYwyQzMqiLF5ce44yZouXSMJdeznUkZyl&id=61562415773754&__cft__[0]=AZU7CDEaqmc58Tcxj3z6y67nzie6WO9tFVJ9dpHuJbDLgr6u1e4iO7HCpcSuGkdvHF8HUtM-RT6aOt7I-7HT_6nSodDisN7ByAAafcUkQKTQhSJUWNZY2gHj9oePSI5JTWZZuMv5991ySttpXKrNIgUuG6VBKCS-vpVRvMgkk6j697lcNsBnS7hL-mLfUacU5mk2i-BAtB9ej_AuUAmcIp7B&__tn__=%2CO%2CP-R